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Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers.

Walmsley, M. and Abram, R.A. (1997) 'Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers.', IEE proceedings : optoelectronics., 144 (4). pp. 189-196.

Abstract

Recent pump probe measurements of the fast optical response of semiconductor laser amplifiers are modelled using a density matrix approach in the relaxation approximation. The results obtained with the model in a variety of situations covering the three regimes below, at and above transparency are examined in terms of the optical response and the underlying carrier dynamics. The essential features of the optical response are explained using a simple physical picture and good qualitative agreement with experiment is demonstrated.

Item Type:Article
Keywords:Laser theory, Matrix algebra, Refractive index, Semiconductor device models, Semiconductor lasers.
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1049/ip-opt:19970510
Record Created:16 Dec 2010 10:05
Last Modified:20 Jan 2011 15:13

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