GC Crow
High mobility electron gases in Si/Si<SUB>0.77</SUB>Ge<SUB>0.23</SUB> quantum wells at 1.7 K
Crow, GC; Abram, RA
Authors
RA Abram
Abstract
Calculations have been carried out to investigate the factors which limit the low temperature, low field mobilities of two dimensional electron gases formed in the X2-valley quantum wells of tensile strained Si/Si0.77Ge0.23 modulation doped structures. The electronic charge density in the system has been solved in conjunction with Poisson's equation to derive a self-consistent solution for the bound sheet charge density. Details of the self-consistent ground state wavefunction are fed into a simple calculation to derive the low field drift mobility. Remote ionized donor impurities in the supply layer and roughness at the SiGe spacer/Si well interface are found to be the main sources of electron scattering in the case of high mobility gases grown on SiGe virtual substrates at 800 °C. The comparatively poor electron mobilities observed for experimental samples produced at the lower growth temperature of 600 °C show an inverse square law dependence of mobility on sheet carrier density, the characteristic for roughness scattering.
Citation
Crow, G., & Abram, R. (1999). High mobility electron gases in Si/Si0.77Ge0.23 quantum wells at 1.7 K. Semiconductor Science and Technology, 14(8), 721-726. https://doi.org/10.1088/0268-1242/14/8/310
Journal Article Type | Article |
---|---|
Publication Date | Jan 1, 1999 |
Deposit Date | Dec 16, 2010 |
Journal | Semiconductor Science and Technology |
Print ISSN | 0268-1242 |
Electronic ISSN | 1361-6641 |
Publisher | IOP Publishing |
Peer Reviewed | Peer Reviewed |
Volume | 14 |
Issue | 8 |
Pages | 721-726 |
DOI | https://doi.org/10.1088/0268-1242/14/8/310 |
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