Cookies

We use cookies to ensure that we give you the best experience on our website. By continuing to browse this repository, you give consent for essential cookies to be used. You can read more about our Privacy and Cookie Policy.


Durham Research Online
You are in:

Screened exchange calculations of semiconductor band structures.

Gibson, Michael C. and Clark, Stewart J. and Brand, Stuart and Abram, Richard A. (2005) 'Screened exchange calculations of semiconductor band structures.', 27th International Conference on the Physics of Semiconductors : ICPS-27. Flagstaff, Arizona, 26-30 July 2004.

Abstract

We have calculated the band structures of several group IV and III-V semiconductors from first principles. The technique we have employed is the screened exchange method, which is an extension of the commonly used Kohn-Sham density functional theory (DFT). In standard DFT, exchange and correlation effects are usually treated with the local density (LDA), or generalised gradient (GGA), approximations. While good structural properties can be obtained for most materials with these approximations, the electronic band-gap is often severely underestimated. The screened exchange method employed here treats exchange non-locally, in a similar manner to the Hartree-Fock method. We find that the screened exchange method significantly improves results in most cases, although the computational cost is somewhat higher.

Item Type:Conference item (Paper)
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1063/1.1994505
Record Created:20 Dec 2010 11:35
Last Modified:20 Jan 2011 15:08

Social bookmarking: del.icio.usConnoteaBibSonomyCiteULikeFacebookTwitterExport: EndNote, Zotero | BibTex
Usage statisticsLook up in GoogleScholar | Find in a UK Library