Heavily doped semiconductors and devices

Abram, RA; Rees, GJ; Wilson, BLH

doi:10.1080/00018737800101484

Heavily doped semiconductors and devices

Abram, RA; Rees, GJ; Wilson, BLH

Authors

RA Abram

GJ Rees

BLH Wilson

Abstract

High carrier concentrations and the fluctuations in random potential resulting from ionized impurities alter the density of states and electron wavefunctions in heavily doped semiconductors. The theoretical and experimental work on these effects is reviewed, special attention being paid to the consequences for the optical and transport properties. Semiconductor devices are often heavily doped and the influence of heavy doping is illustrated in the injection laser and bipolar transistor, which also serve as investigative tools.

Citation

Abram, R., Rees, G., & Wilson, B. (1978). Heavily doped semiconductors and devices. Advances in Physics, 27(6), 799-892. https://doi.org/10.1080/00018737800101484

Journal Article Type	Article
Publication Date	Jan 1, 1978
Deposit Date	Jan 24, 2011
Journal	Advances in Physics
Print ISSN	0001-8732
Electronic ISSN	1460-6976
Publisher	Taylor and Francis Group
Peer Reviewed	Peer Reviewed
Volume	27
Issue	6
Pages	799-892
DOI	https://doi.org/10.1080/00018737800101484