Abram, R.A. and Rees, G.J. and Wilson, B.L.H. (1978) 'Heavily doped semiconductors and devices.', Advances in physics., 27 (6). pp. 799-892.
High carrier concentrations and the fluctuations in random potential resulting from ionized impurities alter the density of states and electron wavefunctions in heavily doped semiconductors. The theoretical and experimental work on these effects is reviewed, special attention being paid to the consequences for the optical and transport properties. Semiconductor devices are often heavily doped and the influence of heavy doping is illustrated in the injection laser and bipolar transistor, which also serve as investigative tools.
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|Publisher Web site:||http://dx.doi.org/10.1080/00018737800101484|
|Record Created:||24 Jan 2011 16:43|
|Last Modified:||25 Jan 2011 11:51|
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