Cookies

We use cookies to ensure that we give you the best experience on our website. You can change your cookie settings at any time. Otherwise, we'll assume you're OK to continue.


Durham Research Online
You are in:

Investigation into IGBT dV/dt during turn-off and its temperature dependence.

Bryant, A. and Yang, S. and Mawby, P. and Xiang, D.W. and Ran, L. and Tavner, P.J. and Palmer, P.R. (2011) 'Investigation into IGBT dV/dt during turn-off and its temperature dependence.', IEEE transactions on power electronics., 26 (10). pp. 3019-3031.


Item Type:Article
Keywords:Capacitance, Charge carrier density, Converters, Equations, Insulated gate bipolar transistors, Junctions, Logic gates.
Full text:PDF - Published Version (495Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1109/TPEL.2011.2125803
Publisher statement:© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Record Created:07 Dec 2011 15:05
Last Modified:16 Dec 2011 15:39

Social bookmarking: del.icio.usConnoteaBibSonomyCiteULikeFacebookTwitterExport: EndNote, Zotero | BibTex
Usage statisticsLook up in GoogleScholar | Find in a UK Library