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Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence

Bryant, A; Yang, S; Mawby, P; Xiang, D; Ran, L; Tavner, PJ; Palmer, PR

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Authors

A Bryant

S Yang

P Mawby

D Xiang

L Ran

PJ Tavner

PR Palmer



Citation

Bryant, A., Yang, S., Mawby, P., Xiang, D., Ran, L., Tavner, P., & Palmer, P. (2011). Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence. IEEE Transactions on Power Electronics, 26(10), 3019-3031. https://doi.org/10.1109/tpel.2011.2125803

Journal Article Type Article
Publication Date Oct 1, 2011
Deposit Date Nov 3, 2011
Publicly Available Date Dec 16, 2011
Journal IEEE Transactions on Power Electronics
Print ISSN 0885-8993
Publisher Institute of Electrical and Electronics Engineers
Peer Reviewed Peer Reviewed
Volume 26
Issue 10
Pages 3019-3031
DOI https://doi.org/10.1109/tpel.2011.2125803
Keywords Capacitance, Charge carrier density, Converters, Equations, Insulated gate bipolar transistors, Junctions, Logic gates.

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