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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman, A.; Rosamond, M.C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A.J.; Mabrook, M.F.; Zeze, D.A.

Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate Thumbnail


Authors

A. Sleiman

M.C. Rosamond

M. Alba Martin

A. Ayesh

A. Al Ghaferi

A.J. Gallant

M.F. Mabrook

D.A. Zeze



Abstract

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 1011 cm−2) and demonstrated 94% charge retention due to the superior encapsulation.

Citation

Sleiman, A., Rosamond, M., Alba Martin, M., Ayesh, A., Al Ghaferi, A., Gallant, A., …Zeze, D. (2012). Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters, 100(2), Article 023302. https://doi.org/10.1063/1.3675856

Journal Article Type Article
Publication Date Jan 9, 2012
Deposit Date Jan 9, 2012
Publicly Available Date Sep 13, 2012
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 100
Issue 2
Article Number 023302
DOI https://doi.org/10.1063/1.3675856

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Copyright Statement
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Sleiman, A. and Rosamond, M.C. and Alba Martin, M. and Ayesh, A. and Al Ghaferi, A. and Gallant, A.J. and Mabrook, M.F. and Zeze, D.A. (2012) 'Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate.', Applied physics letters., 100 (2). 023302 and may be found at http://dx.doi.org/10.1063/1.3675856




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