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Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries.

Park, J. and Jeong, Y-S. and Park, K-S. and Do, L-M. and Bae, J-H. and Choi, J.S. and Pearson, C. and Petty, M.C. (2012) 'Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries.', Journal of applied physics., 111 (10). p. 104512.


Grain boundaries in polycrystalline pentacene films significantly affect the electrical characteristics of pentacene field-effect transistors (FETs). Upon reversal of the gate voltage sweep direction, pentacene FETs exhibited hysteretic behaviours in the subthreshold region, which was more pronounced for the FET having smaller pentacene grains. No shift in the flat-band voltage of the metal-insulator-semiconductor capacitor elucidates that the observed hysteresis was mainly caused by the influence of localized trap states existing at pentacene grain boundaries. From the results of continuous on/off switching operation of the pentacene FETs, hole depletion during the off period is found to be limited by pentacene grain boundaries. It is suggested that the polycrystalline nature of a pentacene film plays an important role on the dynamic characteristics of pentacene FETs.

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Publisher statement:© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 111, 104512 (2012) and may be found at
Record Created:11 Sep 2012 16:35
Last Modified:18 Aug 2015 12:13

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