Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries

Park, J; Y-s, Jeong; K-s, Park; L-m, Do; J-h, Bae; Choi, JS; Pearson, C; Petty, MC

doi:10.1063/1.4721676

Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries

Park, J; Y-s, Jeong; K-s, Park; L-m, Do; J-h, Bae; Choi, JS; Pearson, C; Petty, MC

Authors

J Park

Jeong Y-s

Park K-s

Do L-m

Bae J-h

JS Choi

C Pearson

MC Petty

Abstract

Grain boundaries in polycrystalline pentacene films significantly affect the electrical characteristics of pentacene field-effect transistors (FETs). Upon reversal of the gate voltage sweep direction, pentacene FETs exhibited hysteretic behaviours in the subthreshold region, which was more pronounced for the FET having smaller pentacene grains. No shift in the flat-band voltage of the metal-insulator-semiconductor capacitor elucidates that the observed hysteresis was mainly caused by the influence of localized trap states existing at pentacene grain boundaries. From the results of continuous on/off switching operation of the pentacene FETs, hole depletion during the off period is found to be limited by pentacene grain boundaries. It is suggested that the polycrystalline nature of a pentacene film plays an important role on the dynamic characteristics of pentacene FETs.

Citation

Park, J., Y-s, J., K-s, P., L-m, D., J-h, B., Choi, J., …Petty, M. (2012). Subthreshold characteristics of pentacene field-effect transistors influenced by grain boundaries. Journal of Applied Physics, 111(10), Article 104512. https://doi.org/10.1063/1.4721676

Journal Article Type	Article
Publication Date	May 15, 2012
Deposit Date	Aug 31, 2012
Publicly Available Date	Sep 13, 2012
Journal	Journal of Applied Physics
Print ISSN	0021-8979
Electronic ISSN	1089-7550
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	111
Issue	10
Article Number	104512
DOI	https://doi.org/10.1063/1.4721676

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Copyright Statement
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 111, 104512 (2012) and may be found at http://dx.doi.org/10.1063/1.4721676