Nanomagnetic engineering of the properties of domain wall atom traps.

Abstract

We have used the results of micromagnetic simulations to investigate the effects of nanowire geometry and domain wall magnetization structure on the characteristic parameters of magnetic atom traps formed by domain walls in planar ferromagnetic nanowires. It is found that when traps are formed in the near-field of a domain wall both nanowire geometry and wall structure have a substantial effect on trap frequency (how tightly atoms are spatially confined) and adiabaticity (how closely the atoms’ magnetic moments track the applied field direction within the trap). We also show that in certain regimes a trap’s depth depends only on the amplitude of an externally applied rotating magnetic field, thus allowing it to be tuned independently of the trap’s other critical parameters.