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A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics

Mendis, BG; Bowen, L; Jiang, QZ

A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics Thumbnail


Authors

Leon Bowen leon.bowen@durham.ac.uk
Senior Manager (Electron Microscopy)

QZ Jiang



Abstract

A cathodoluminescence-based, contactless method for extracting the bulk minority carrier diffusion length and reduced recombination velocity of an individual grain boundary is applied to vapor grown CdTe epitaxial films. The measured diffusion length was within the range of 0.4–0.6 μm and the grain boundary recombination velocity varied from 500 to 750 cm/s. The technique can be used to investigate the effect of grain boundaries on photovoltaic performance.

Citation

Mendis, B., Bowen, L., & Jiang, Q. (2010). A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics. Applied Physics Letters, 97(9), Article 092112. https://doi.org/10.1063/1.3486482

Journal Article Type Article
Publication Date Aug 30, 2010
Deposit Date Aug 10, 2011
Publicly Available Date Mar 29, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 97
Issue 9
Article Number 092112
DOI https://doi.org/10.1063/1.3486482

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Published Journal Article (785 Kb)
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Copyright Statement
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mendis, B.G. and Bowen, L. and Jiang, Q.Z. (2010) 'A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics.', Applied physics letters., 97 (9). 092112 and may be found at http://dx.doi.org/10.1063/1.3486482





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