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A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics.

Mendis, B.G. and Bowen, L. and Jiang, Q.Z. (2010) 'A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics.', Applied physics letters., 97 (9). 092112.

Abstract

A cathodoluminescence-based, contactless method for extracting the bulk minority carrier diffusion length and reduced recombination velocity of an individual grain boundary is applied to vapor grown CdTe epitaxial films. The measured diffusion length was within the range of 0.4–0.6 μm and the grain boundary recombination velocity varied from 500 to 750 cm/s. The technique can be used to investigate the effect of grain boundaries on photovoltaic performance.

Item Type:Article
Full text:PDF - Published Version (767Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.3486482
Publisher statement:Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Mendis, B.G. and Bowen, L. and Jiang, Q.Z. (2010) 'A contactless method for measuring the recombination velocity of an individual grain boundary in thin-film photovoltaics.', Applied physics letters., 97 (9). 092112 and may be found at http://dx.doi.org/10.1063/1.3486482
Record Created:27 Sep 2012 13:50
Last Modified:09 Oct 2012 14:32

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