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Oxygen vacancy levels and electron transport in Al(2)O(3).

Liu, D. and Clark, S.J. and Robertson, J. (2010) 'Oxygen vacancy levels and electron transport in Al(2)O(3).', Applied physics letters., 96 (3). 032905.

Abstract

The energy levels of the oxygen vacancy in α- and θ-Al2O3 were calculated using the screened exchange hybrid functional, and explain the electron hopping and trapping levels seen in deposited Al2O3 at ∼ 1.8 eV below its conduction band edge. The vacancy supports five accessible charge states, from 2+ to 2−. Electron hopping corresponds to the 0/− level, which lies 1.8 eV below the conduction band edge in θ-Al2O3. This level lies much deeper than it does HfO2. The +/0 level lies at 2.8 eV above oxide valence band in θ-Al2O3 and thus below the Si valence band top.

Item Type:Article
Keywords:Aluminium compounds, Conduction bands, Hopping conduction, Vacancies (crystal), Valence bands.
Full text:PDF - Published Version (151Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.3293440
Publisher statement:Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Liu, D. and Clark, S.J. and Robertson, J. (2010) 'Oxygen vacancy levels and electron transport in Al(2)O(3).', Applied physics letters., 96 (3). 032905 and may be found at http://dx.doi.org/10.1063/1.3293440
Record Created:27 Sep 2012 14:05
Last Modified:09 Oct 2012 14:28

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