Limits to doping in oxides

Robertson, J.; Clark, S.J.

doi:10.1103/physrevb.83.075205

Limits to doping in oxides

Robertson, J.; Clark, S.J.

Authors

J. Robertson

Professor Stewart Clark s.j.clark@durham.ac.uk
Professor

Abstract

The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The n-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas p-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.

Citation

Robertson, J., & Clark, S. (2011). Limits to doping in oxides. Physical review B, 83(7), Article 075205. https://doi.org/10.1103/physrevb.83.075205

Journal Article Type	Article
Publication Date	Feb 1, 2011
Deposit Date	Jan 31, 2012
Publicly Available Date	Nov 27, 2012
Journal	Physical review B: Condensed matter and materials physics
Print ISSN	1098-0121
Electronic ISSN	1550-235X
Publisher	American Physical Society
Peer Reviewed	Peer Reviewed
Volume	83
Issue	7
Article Number	075205
DOI	https://doi.org/10.1103/physrevb.83.075205