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Multilevel 3 bit-per-cell magnetic random access memory concepts and their associated control circuit architectures.

Cramman, H. and Eastwood, D.S. and King, J.A. and Atkinson, D. (2012) 'Multilevel 3 bit-per-cell magnetic random access memory concepts and their associated control circuit architectures.', IEEE transactions on nanotechnology., 11 (1). pp. 63-70.


Designs for two novel multilevel magnetic random access memory (MRAM) concepts are presented in this paper along with their associated control circuit architectures. Both the ChiralMEM and 3-D-MRAM concepts contain eight states with distinct electrical resistances, giving a 3 bit-per-cell capacity. Operation of the two memory concepts are presented along with designs for the circuitry in particular focusing on the conversion of three conventional binary bits to octal encoded data and the required sequence for writing eight states per cell using current-driven magnetic fields. Discrimination and subsequent conversion of the eight readout resistance levels back to three conventional binary bits are discussed along with the write sequence for controlling arrays of multibit memory cells.

Item Type:Article
Full text:(AM) Accepted Manuscript
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Publisher statement:© 2011 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Date accepted:No date available
Date deposited:01 May 2014
Date of first online publication:January 2012
Date first made open access:No date available

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