Dodd, L.E. and Gallant, A.J. and Wood, D. (2013) 'Controlled reactive ion etching and plasma regrowth of titanium oxides of known thickness for production of metal-oxide-metal diodes.', Micro & nano letters., 8 (8). pp. 476-478.
Abstract
The successful production, via two different oxidation processes, of metal-oxide-metal (MOM) diodes is presented. An innovative reactive ion etching and plasma assisted regrowth process has been used to provide oxides, which are in the thickness range 4.0–5.1 nm. These are thinner and physically more uniform than oxides grown in a furnace, resulting in diodes which should conduct via electron tunnelling across the MOM junction. Transmission electron microscopy analysis has been used in conjunction with time of flight secondary ion mass spectrometry analysis to verify oxide thickness and uniformity.
| Item Type: | Article |
|---|---|
| Full text: | (VoR) Version of Record Available under License - Creative Commons Attribution. Download PDF (226Kb) |
| Status: | Peer-reviewed |
| Publisher Web site: | http://dx.doi.org/10.1049/mnl.2013.0177 |
| Publisher statement: | This is an open access article published by the IET under the Creative Commons Attribution License (http://creativecommons.org/licenses/by/3.0/) |
| Date accepted: | No date available |
| Date deposited: | 14 July 2014 |
| Date of first online publication: | August 2013 |
| Date first made open access: | No date available |
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