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Terahertz generation by GaAs nanowires

Trukhin, V.N.; Buyskikh, A.S.; Kaliteevskaya, N.A.; Bourauleuv, A.D.; Samoilov, L.L.; Samsonenko, Y.B.; Cirlin, G.E.; Kaliteevski, M.A.; Gallant, A.J.

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Authors

V.N. Trukhin

A.S. Buyskikh

N.A. Kaliteevskaya

A.D. Bourauleuv

L.L. Samoilov

Y.B. Samsonenko

G.E. Cirlin

M.A. Kaliteevski



Abstract

We report on the emission of terahertz (THz) radiation from p-doped and intentionally undoped GaAs nanowires (NWs). The THz emission has been associated with the contributions of the drift and diffusion currents, excited in the 1D NWs. Taking into account the filling factor, the THz power emission for the NWs is shown to be 40 times more than that of the bulk epitaxial GaAs substrate. By analyzing the non-equilibrium dynamics of the photoinduced carriers in the nanowires, the charge carrier lifetime is shown to be of the order of 3 ns and the drift velocity 105 m/s.

Citation

Trukhin, V., Buyskikh, A., Kaliteevskaya, N., Bourauleuv, A., Samoilov, L., Samsonenko, Y., …Gallant, A. (2013). Terahertz generation by GaAs nanowires. Applied Physics Letters, 103(7), https://doi.org/10.1063/1.4818719

Journal Article Type Article
Publication Date Aug 12, 2013
Deposit Date May 1, 2014
Publicly Available Date Mar 28, 2024
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 103
Issue 7
DOI https://doi.org/10.1063/1.4818719

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Copyright Statement
© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Trukhin, V.N., Buyskikh, A.S., Kaliteevskaya, N.A., Bourauleuv, A.D., Samoilov, L.L., Samsonenko, Y.B., Cirlin, G.E., Kaliteevski, M.A. & Gallant, A.J. (2013). Terahertz generation by GaAs nanowires. Applied Physics Letters 103(7): 072108 and may be found at http://dx.doi.org10.1063/1.4818719.





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