Trukhin, V.N. and Buyskikh, A.S. and Kaliteevskaya, N.A. and Bourauleuv, A.D. and Samoilov, L.L. and Samsonenko, Y.B. and Cirlin, G.E. and Kaliteevski, M.A. and Gallant, A.J. (2013) 'Terahertz generation by GaAs nanowires.', Applied physics letters., 103 (7). 072108.
We report on the emission of terahertz (THz) radiation from p-doped and intentionally undoped GaAs nanowires (NWs). The THz emission has been associated with the contributions of the drift and diffusion currents, excited in the 1D NWs. Taking into account the filling factor, the THz power emission for the NWs is shown to be 40 times more than that of the bulk epitaxial GaAs substrate. By analyzing the non-equilibrium dynamics of the photoinduced carriers in the nanowires, the charge carrier lifetime is shown to be of the order of 3 ns and the drift velocity 105 m/s.
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|Publisher Web site:||http://dx.doi.org/10.1063/1.4818719|
|Publisher statement:||© 2013 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Trukhin, V.N., Buyskikh, A.S., Kaliteevskaya, N.A., Bourauleuv, A.D., Samoilov, L.L., Samsonenko, Y.B., Cirlin, G.E., Kaliteevski, M.A. & Gallant, A.J. (2013). Terahertz generation by GaAs nanowires. Applied Physics Letters 103(7): 072108 and may be found at http://dx.doi.org10.1063/1.4818719.|
|Date accepted:||No date available|
|Date deposited:||11 August 2014|
|Date of first online publication:||August 2013|
|Date first made open access:||No date available|
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