Rowan-Robinson, R.M. and Hindmarch, A.T. and Atkinson, D. (2014) 'Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model.', Physical review B., 90 (10). p. 104401.
Electron-magnon spin-flip scattering in thin films was studied by investigating the thickness dependence of the anisotropic magnetoresistance (AMR) effect and spin-wave stiffness. The absolute resistivity change due to the AMR effect (Δρ) in Ni, Ni:V, and Ni:Cr doped films reduced with film thickness. This loss of AMR is due to enhanced spin-flip scattering, dropping at the same thickness irrespective of dopant. The spin-wave stiffness reduced at the same thickness, confirming enhanced electron-magnon spin-flip scattering. The AMR ratio was fitted with a simple model, in which thickness dependence was included in a spin mixing resistivity term. This analysis gives insight into the fundamental contribution of magnon scattering to the resistivity in thin films, which ultimately has relevance to spin coherence in spintronic devices.
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|Publisher Web site:||http://dx.doi.org/10.1103/PhysRevB.90.104401|
|Publisher statement:||Reprinted with permission from the American Physical Society: Rowan-Robinson, R.M., Hindmarch, A.T. and Atkinson, D. (2014) 'Enhanced electron-magnon scattering in ferromagnetic thin films and the breakdown of the Mott two-current model.', Physical review B, 90 (10): 104401. © 2014 by the American Physical Society. Readers may view, browse, and/or download material for temporary copying purposes only, provided these uses are for noncommercial personal purposes. Except as provided by law, this material may not be further reproduced, distributed, transmitted, modified, adapted, performed, displayed, published, or sold in whole or part, without prior written permission from the American Physical Society.|
|Date accepted:||02 September 2014|
|Date deposited:||17 September 2014|
|Date of first online publication:||02 September 2014|
|Date first made open access:||No date available|
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