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Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis

Jeong, Y.; Pearson, C.; Lee, Y.U.; Winchester, L.; Hwang, J.; Kim, H.; Do, L.-M.; Petty, M.C.

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Authors

Y. Jeong

C. Pearson

Y.U. Lee

L. Winchester

J. Hwang

H. Kim

L.-M. Do

M.C. Petty



Abstract

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of −3.5 V. These values were found to depend reversibly on measurement conditions.

Citation

Jeong, Y., Pearson, C., Lee, Y., Winchester, L., Hwang, J., Kim, H., …Petty, M. (2014). Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis. Journal of Electronic Materials, 43(11), 4241-4245. https://doi.org/10.1007/s11664-014-3342-8

Journal Article Type Article
Publication Date Nov 1, 2014
Deposit Date Oct 9, 2014
Publicly Available Date Mar 29, 2024
Journal Journal of Electronic Materials
Print ISSN 0361-5235
Electronic ISSN 1543-186X
Publisher Springer
Peer Reviewed Peer Reviewed
Volume 43
Issue 11
Pages 4241-4245
DOI https://doi.org/10.1007/s11664-014-3342-8
Keywords Zinc oxide transistors, Chemical spray pyrolysis, Effect of measurement conditions.

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