Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

Jeong, Y.; Pearson, C.; Lee, Y.U.; Ahn, K.; Cho, C.-R.; Hwang, J.; Kim, H.; Do, L.-M.; Petty, M.C.

doi:10.1063/1.4893470

Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors

Jeong, Y.; Pearson, C.; Lee, Y.U.; Ahn, K.; Cho, C.-R.; Hwang, J.; Kim, H.; Do, L.-M.; Petty, M.C.

Authors

Y. Jeong

C. Pearson

Y.U. Lee

K. Ahn

C.-R. Cho

J. Hwang

H. Kim

L.-M. Do

M.C. Petty

Abstract

The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold voltage (VTH) shift on repeated measurements. In contrast, following the plasma processing, the corresponding characteristics of the transistors exhibited negligible hysteresis and a very small VTH shift; the devices also possessed higher field effect carrier mobility values. These results were attributed to the presence of functional groups in the vicinity of the semiconductor/gate insulator interface, which prevents the formation of an effective channel.

Citation

Jeong, Y., Pearson, C., Lee, Y., Ahn, K., Cho, C., Hwang, J., …Petty, M. (2014). Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors. Journal of Applied Physics, 116(7), Article 074509. https://doi.org/10.1063/1.4893470

Journal Article Type	Article
Publication Date	Aug 21, 2014
Deposit Date	Oct 23, 2014
Publicly Available Date	Oct 24, 2014
Journal	Journal of Applied Physics
Print ISSN	0021-8979
Electronic ISSN	1089-7550
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	116
Issue	7
Article Number	074509
DOI	https://doi.org/10.1063/1.4893470

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Copyright Statement
© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 116, 074509 (2014) and may be found at http://dx.doi.org/10.1063/1.4893470.