Wells, G.H. and Hopf, T. and Vassilevski, K.V. and Escobedo-Cousin, E. and Wright, N.G. and Horsfall, A.B. and Goss, J.P. and O'Neill, A.G. and Hunt, M.R.C. (2014) 'Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects.', Applied physics letters., 105 (19). p. 193109.
Pleat defects in graphene grown on SiC(0001) were studied and used to determine the adhesion energy between few-layer graphene (3 ± 1 monolayers) and the substrate. An adhesion energy of 3.0±1.61.0J/m2 was determined using a continuum model describing the buckling of the film and delamination. The continuum model used can be applied to any graphene-substrate system in which pleat formation occurs due to differences in thermal expansion. The large value of adhesion energy observed for graphene on SiC, compared with that on materials such as Ni, Cu, and SiO2, arises from delamination of the graphene film and buffer layer from the SiC substrate, which requires the breaking of covalent bonds. Preferential orientation of pleats at 120° with respect to each other was also observed; this is attributed to favorable formation of pleats along high symmetry directions of the graphene lattice.
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|Publisher Web site:||http://dx.doi.org/10.1063/1.4901941|
|Publisher statement:||© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Wells, G.H., Hopf, T., Vassilevski, K.V., Escobedo-Cousin, E., Wright, N.G., Horsfall, A.B., Goss, J.P., O'Neill, A.G. and Hunt, M.R.C. (2014) 'Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects.', Applied physics letters., 105 (19). p. 193109 and may be found at http://dx.doi.org/10.1063/1.4901941.|
|Date accepted:||04 November 2014|
|Date deposited:||10 December 2014|
|Date of first online publication:||14 November 2014|
|Date first made open access:||No date available|
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