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Development of phase shift lithography for the production of metal-oxide-metal diodes.

Dodd, L.E. and Rosamond, M.C. and Gallant, A.J. and Wood, D. (2014) 'Development of phase shift lithography for the production of metal-oxide-metal diodes.', Micro and nano letters., 9 (7). pp. 437-440.


Metal-oxide-metal (MOM) diodes have been produced by combining two novel techniques: a reactive ion etche and subsequent plasma oxidation, and a phase shift lithography process. This has resulted in a significant reduction in device feature sizes, down to sub-micron dimensions and with an improved zero voltage curvature coefficient of up to 2.8 V-1 for the associated diodes. Given the use of MOM diodes in high speed rectification applications, the combination of the reduction in diode area as well as the controlled oxide growth aims to assist in the improved cutoff frequency of the devices, thus ensuring the potential for high speed applications.

Item Type:Article
Keywords:MIM devices, Diodes, Lithography, Oxidation, Phase shifting masks, Plasma materials processing, Rectification, Sputter etching.
Full text:(AM) Accepted Manuscript
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Publisher statement:This paper is a postprint of a paper submitted to and accepted for publication in Micro and Nano Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library.
Date accepted:No date available
Date deposited:21 January 2015
Date of first online publication:July 2014
Date first made open access:No date available

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