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Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

Burkhardt, M.; Jedaa, A.; Novak, M.; Ebel, A.; Voïtchovsky, K.; Stellacci, F.; Hirsch, A.; Halik, M.

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Authors

M. Burkhardt

A. Jedaa

M. Novak

A. Ebel

F. Stellacci

A. Hirsch

M. Halik



Abstract

A mixed self-assembled monolayer containing aliphatic and electron-accepting (C60) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned.

Citation

Burkhardt, M., Jedaa, A., Novak, M., Ebel, A., Voïtchovsky, K., Stellacci, F., …Halik, M. (2010). Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors. Advanced Materials, 22(23), 2525-2528. https://doi.org/10.1002/adma.201000030

Journal Article Type Article
Publication Date Jun 18, 2010
Deposit Date Sep 9, 2013
Publicly Available Date Feb 12, 2015
Journal Advanced Materials
Print ISSN 0935-9648
Electronic ISSN 1521-4095
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 22
Issue 23
Pages 2525-2528
DOI https://doi.org/10.1002/adma.201000030
Keywords Self-assembly, Organic electronics, Thin films, Transistors

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Accepted Journal Article (450 Kb)
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Copyright Statement
This is the accepted version of the following article: Burkhardt, M. and Jedaa, A. and Novak, M. and Ebel, A. and Voïtchovsky, K. and Stellacci, F. and Hirsch , A. and Halik, M. (2010) 'Concept of a molecular charge storage dielectric layer for organic thin-film memory transistors.', Advanced materials., 22 (23). pp. 2525-2528, which has been published in final form at http://dx.doi.org/10.1002/adma.201000030. This article may be used for non-commercial purposes in accordance With Wiley-VCH Terms and Conditions for self-archiving.





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