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Optimizing MOM diode performance via the oxidation technique

Dodd, L.E.; Gallant, A.J.; Wood, D.

Authors

L.E. Dodd

D. Wood



Abstract

This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

Citation

Dodd, L., Gallant, A., & Wood, D. (2011). Optimizing MOM diode performance via the oxidation technique. . https://doi.org/10.1109/icsens.2011.6127347

Conference Name 2011 IEEE Sensors
Conference Location Limerick, Ireland
Start Date Oct 28, 2011
End Date Oct 31, 2011
Publication Date Jan 1, 2011
Deposit Date May 1, 2014
Publisher Institute of Electrical and Electronics Engineers
Pages 176-179
ISBN 9781424492909
DOI https://doi.org/10.1109/icsens.2011.6127347