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Optimizing MOM diode performance via the oxidation technique.

Dodd, L.E. and Gallant, A.J. and Wood, D. (2011) 'Optimizing MOM diode performance via the oxidation technique.', 2011 IEEE Sensors Limerick, Ireland, 28-31 October 2011.

Abstract

This work presents a study of the effect of a simple oxidation technique on the electrical performance of Ti/TiOx/Pt MOM (metal-oxide-metal) diodes. A fabrication process has been designed to produce devices with a high yield. The I-V characteristics show good diode behavior: subsequent mathematical analysis to extract the key parameters of curvature coefficient and resistance at zero bias demonstrate how these numbers depend on the curve fitting method. Nevertheless, diodes with high curvature (typically 5.5 V-1 unbiased, 15 V-1 biased) represent results among the best to date. Complimentary physical information from the structures has been obtained via AFM and RBS analysis.

Item Type:Conference item (Paper)
Full text:Full text not available from this repository.
Publisher Web site:http://dx.doi.org/10.1109/ICSENS.2011.6127347
Date accepted:No date available
Date deposited:No date available
Date of first online publication:2011
Date first made open access:No date available

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