Defect states in the high-dielectric-constant gate oxide LaAlO3

Xiong, K.; Robertson, J.; Clark, S.J.

doi:10.1063/1.2221521

Defect states in the high-dielectric-constant gate oxide LaAlO3

Xiong, K.; Robertson, J.; Clark, S.J.

Authors

K. Xiong

J. Robertson

Professor Stewart Clark s.j.clark@durham.ac.uk
Professor

Abstract

We present calculations of the energy levels of the oxygen vacancy,AlLa antisite, and oxygen interstitial defects in LaAlO3 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level near the LaAlO3conduction band and above the Si gap. It is identified as the main electron trap and the cause of instability. The AlLa antisite gives a state near midgap, neutral when empty, which would be an important trap, with no counterpart in HfO2.

Citation

Xiong, K., Robertson, J., & Clark, S. (2006). Defect states in the high-dielectric-constant gate oxide LaAlO3. Applied Physics Letters, 89(2), Article 022907. https://doi.org/10.1063/1.2221521

Journal Article Type	Article
Acceptance Date	May 25, 2006
Publication Date	Jul 10, 2006
Deposit Date	Jan 31, 2012
Publicly Available Date	Aug 18, 2015
Journal	Applied Physics Letters
Print ISSN	0003-6951
Electronic ISSN	1077-3118
Publisher	American Institute of Physics
Peer Reviewed	Peer Reviewed
Volume	89
Issue	2
Article Number	022907
DOI	https://doi.org/10.1063/1.2221521

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Copyright Statement
© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 89, 022907 (2006) and may be found at http://dx.doi.org/10.1063/1.2221521