Hopf, T. and Vassilevski, K. and Escobedo-Cousin, E. and King, P. and Wright, N. G. and O'Neill, A. G. and Horsfall, A. B. and Goss, J. and Wells, G. and Hunt, M. (2015) 'Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.', Materials science forum., 821-823 . pp. 937-940.
Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3 over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.
|Keywords:||AFM, ALD, Epitaxial Graphene, Graphene Field-Effect Transistors, Raman Spectroscopy, STM|
|Full text:||Publisher-imposed embargo |
(AM) Accepted Manuscript
File format - PDF (708Kb)
|Publisher Web site:||http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.937|
|Date accepted:||21 January 2015|
|Date deposited:||10 January 2016|
|Date of first online publication:||2015|
|Date first made open access:||No date available|
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