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Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.

Hopf, T. and Vassilevski, K. and Escobedo-Cousin, E. and King, P. and Wright, N. G. and O'Neill, A. G. and Horsfall, A. B. and Goss, J. and Wells, G. and Hunt, M. (2015) 'Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.', Materials science forum., 821-823 . pp. 937-940.

Abstract

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3 over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

Item Type:Article
Keywords:AFM, ALD, Epitaxial Graphene, Graphene Field-Effect Transistors, Raman Spectroscopy, STM
Full text:Publisher-imposed embargo
(AM) Accepted Manuscript
File format - PDF
(708Kb)
Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.937
Date accepted:21 January 2015
Date deposited:10 January 2016
Date of first online publication:2015
Date first made open access:No date available

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