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Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance.

Tokaç, M. and Wang, M. and Jaiswal, S. and Rushforth, A.W. and Gallagher, B.L. and Atkinson, D. and Hindmarch, A.T. (2015) 'Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance.', AIP advances., 5 (12). p. 127108.

Abstract

We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobaltfilm thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobaltfilm thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.

Item Type:Article
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Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1063/1.4937556
Publisher statement:© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. See: http://creativecommons.org/licenses/by/4.0/
Date accepted:27 November 2015
Date deposited:06 January 2016
Date of first online publication:07 December 2015
Date first made open access:No date available

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