Tokaç, M. and Wang, M. and Jaiswal, S. and Rushforth, A.W. and Gallagher, B.L. and Atkinson, D. and Hindmarch, A.T. (2015) 'Interfacial contribution to thickness dependent in-plane anisotropic magnetoresistance.', AIP advances., 5 (12). p. 127108.
We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having designed electrically interface transparency. With an electrically opaque cobalt/overlayer interface, the AMR ratio is shown to vary in inverse proportion to the cobaltfilm thickness; an indication that in-plane AMR is a consequence of anisotropic scattering with both volume and interfacial contributions. The interface scattering anisotropy opposes the volume scattering contribution, causing the AMR ratio to diminish as the cobaltfilm thickness is reduced. An intrinsic interface effect explains the significantly reduced AMR ratio in ultra-thin films.
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|Publisher Web site:||http://dx.doi.org/10.1063/1.4937556|
|Publisher statement:||© 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. See: http://creativecommons.org/licenses/by/4.0/|
|Date accepted:||27 November 2015|
|Date deposited:||06 January 2016|
|Date of first online publication:||07 December 2015|
|Date first made open access:||No date available|
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