Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Jeong, Y.; Pearson, C.; Kim, H-G.; Park, M-Y.; Kim, H.; Do, L-M.; Petty, M.C.

doi:10.1021/acsami.5b10520

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Jeong, Y.; Pearson, C.; Kim, H-G.; Park, M-Y.; Kim, H.; Do, L-M.; Petty, M.C.

Authors

Y. Jeong

C. Pearson

H-G. Kim

M-Y. Park

H. Kim

L-M. Do

M.C. Petty

Abstract

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10−7 A/cm2) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm2/(V s), an on/off ratio of ∼107, a threshold voltage of −1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm2/(V s) and on/off ratio of ∼107.

Citation

Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. (2016). Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. ACS Applied Materials and Interfaces, 8(3), 2061-2070. https://doi.org/10.1021/acsami.5b10520

Journal Article Type	Article
Acceptance Date	Dec 24, 2015
Online Publication Date	Dec 24, 2015
Publication Date	Jan 27, 2016
Deposit Date	Jan 15, 2016
Publicly Available Date	Dec 24, 2016
Journal	ACS Applied Materials and Interfaces
Print ISSN	1944-8244
Electronic ISSN	1944-8252
Publisher	American Chemical Society
Peer Reviewed	Peer Reviewed
Volume	8
Issue	3
Pages	2061-2070
DOI	https://doi.org/10.1021/acsami.5b10520
Keywords	Solution process, Low temperature, Solution-processed silicon dioxide, Zinc oxide, Zinc oxide field-effect transistor, Oxygen plasma.

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Copyright Statement
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://dx.doi.org/10.1021/acsami.5b10520.