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Modeling of axial heterostructure formation in ternary III-V nanowires

Koryakin, A.A.; Sibirev, N.V.; Zeze, D.A.

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Authors

A.A. Koryakin

N.V. Sibirev



Abstract

A model is proposed to depict the formation of axial heterostructure in ternary III-V nanowires (NW) grown by the catalytic vapor-liquid-solid (VLS) method. Our approach is based on the determination of chemical potential of a four-component liquid using the regular solution model and Stringfellow's scheme for the computation of the interaction coefficients of species present in the droplet. The model allows the estimation of the heterojunction width dependence on the growth temperature. This dependence has not been reported before by any previous theoretical studies. The AlGaAs/GaAs heterojunction formation in the Au-catalyzed AlGaAs NWs was considered as an example of ternary system. The heterojunction width was found to increase with the growth temperature with a second-order polynomial dependence.

Citation

Koryakin, A., Sibirev, N., & Zeze, D. (2015). Modeling of axial heterostructure formation in ternary III-V nanowires. Journal of Physics: Conference Series, 643, https://doi.org/10.1088/1742-6596/643/1/012007

Journal Article Type Article
Online Publication Date Nov 2, 2015
Publication Date Nov 2, 2015
Deposit Date Mar 8, 2016
Publicly Available Date Mar 28, 2024
Journal Journal of Physics: Conference Series
Print ISSN 1742-6588
Electronic ISSN 1742-6596
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 643
DOI https://doi.org/10.1088/1742-6596/643/1/012007

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http://creativecommons.org/licenses/by/4.0/

Copyright Statement
Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.





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