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Twinning in vapour-grown, large volume Cd1−xZnxTe crystals.

Tanner, B.K. and Mullins, J.T. and Pym, A.T.G. and Maneuski, D. (2016) 'Twinning in vapour-grown, large volume Cd1−xZnxTe crystals.', Journal of crystal growth., 448 . pp. 44-50.

Abstract

The onset of twinning from View the MathML source to View the MathML source in large volume Cd1−xZnx Te crystals, grown by vapour transport on View the MathML source, often referred to as (211)B, oriented GaAs seeds, has been investigated using X-ray diffraction imaging (X-ray topography). Twinning is not associated with strains at the GaAs/CdTe interface as the initial growth was always in View the MathML source orientation. Nor is twinning related to lattice strains associated with injection of Zn subsequent to initial nucleation and growth of pure CdTe as in both cases twinning occurred after growth of several mm length of Cd1−xZnxTe. While in both cases examined, there was a region of disturbed growth prior to the twinning transition, in neither crystal does this strain appear to have nucleated the twinning process. In both cases, un-twinned material remained after twinning was observed, the scale of the resulting twin boundaries being sub-micron. Simultaneous twinning across the whole sample surface was observed in one sample, whereas in the other, twinning was nucleated at different points and times in the growth.

Item Type:Article
Full text:(AM) Accepted Manuscript
Available under License - Creative Commons Attribution Non-commercial No Derivatives.
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Status:Peer-reviewed
Publisher Web site:http://dx.doi.org/10.1016/j.jcrysgro.2016.05.011
Publisher statement:© 2016 This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/
Date accepted:09 May 2016
Date deposited:08 June 2016
Date of first online publication:10 May 2016
Date first made open access:10 May 2017

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