An ultrathin organic insulator for metal-insulator-metal diodes

Etor, David; Dodd, Linzi; Wood, David; Balocco, Claudio

doi:10.1109/ted.2016.2568279

An ultrathin organic insulator for metal-insulator-metal diodes

Etor, David; Dodd, Linzi; Wood, David; Balocco, Claudio

Authors

David Etor

Linzi Dodd

David Wood

Professor Claudio Balocco claudio.balocco@durham.ac.uk
Professor

Abstract

The design and fabrication metal-insulator-metal (MIM) diodes using an ultrathin organic insulator are presented. The insulating layer was found to be compact, highly conformal, and uniform, effectively overcoming the main design challenge in MIM diodes. The diodes have strong nonlinear current-voltage characteristics with a typical zero-bias curvature coefficient of 5.4 V-1 and a voltage responsivity of 1.9 kV/W at a frequency of 1 GHz. The fabrication of the diodes only requires only low-temperature processing, which is cost effective, and can potentially be ported to large-area roll-to-roll manufacturing.

Citation

Etor, D., Dodd, L., Wood, D., & Balocco, C. (2016). An ultrathin organic insulator for metal-insulator-metal diodes. IEEE Transactions on Electron Devices, 63(7), 2887-2891. https://doi.org/10.1109/ted.2016.2568279

Journal Article Type	Article
Acceptance Date	May 12, 2016
Online Publication Date	Jun 20, 2016
Publication Date	Jul 1, 2016
Deposit Date	Jun 15, 2016
Publicly Available Date	Jun 15, 2016
Journal	IEEE Transactions on Electron Devices
Print ISSN	0018-9383
Publisher	Institute of Electrical and Electronics Engineers
Peer Reviewed	Peer Reviewed
Volume	63
Issue	7
Pages	2887-2891
DOI	https://doi.org/10.1109/ted.2016.2568279

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