Troughton, J. and Downs, P. and Price, R. and Atkinson, D. (2017) 'Densification of a-IGZO with low-temperature annealing for flexible electronics applications.', Applied physics letters., 110 (1). 011903.
Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.
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|Publisher Web site:||https://doi.org/10.1063/1.4973629|
|Publisher statement:||© 2017 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Troughton, J. and Downs, P. and Price, R. and Atkinson, D. (2017) 'Densification of a-IGZO with low-temperature annealing for flexible electronics applications.', Applied physics letters., 110 (1), 011903 and may be found at https://doi.org/10.1063/1.4973629|
|Date accepted:||22 December 2016|
|Date deposited:||22 February 2017|
|Date of first online publication:||04 January 2017|
|Date first made open access:||04 January 2018|
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