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Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors.

Ullah, Mujeeb and Armin, Ardalan and Tandy, Kristen and Yambem, Soniya D. and Burn, Paul L. and Meredith, Paul and Namdas, Ebinazar B. (2015) 'Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors.', Scientific reports., 5 . p. 8818.


Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications.

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Date accepted:26 January 2015
Date deposited:20 April 2017
Date of first online publication:06 March 2015
Date first made open access:No date available

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