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Selective reflection from an Rb layer with a thickness below λ/12 and applications.

Sargsyan, Armen and Papoyan, Aram and Hughes, Ifan G. and Adams, Charles S. and Sarkisyan, David (2017) 'Selective reflection from an Rb layer with a thickness below λ/12 and applications.', Optics letters., 42 (8). pp. 1476-1479.


We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L < 70 nm, which is smaller than the length scale of evanescent fields λ∕2π and more than an order of magnitude smaller than the optical wavelength. A 240 MHz redshift due to the atom-surface interaction is observed for a cell thickness of L 40 nm. In addition, complete frequency-resolved hyperfine Paschen– Back splitting of atomic transitions to four components for 87Rb and six components for 87Rb is recorded in a strong magnetic field (B > 2 kG).

Item Type:Article
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Publisher statement:© 2017 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
Date accepted:14 March 2017
Date deposited:18 May 2017
Date of first online publication:04 April 2017
Date first made open access:04 April 2018

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