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Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon

Tanner, Brian; Allen, David; Wittge, Jochen; Danilewsky, Andreas; Garagorri, Jorge; Gorostegui-Colinas, Eider; Elizalde, M.; McNally, Patrick

Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon Thumbnail


Authors

David Allen

Jochen Wittge

Andreas Danilewsky

Jorge Garagorri

Eider Gorostegui-Colinas

M. Elizalde

Patrick McNally



Abstract

The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a few micrometres of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometres. For example, Raman data provide an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimetre length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometres of the bevel edge of 200 mm diameter wafers.

Citation

Tanner, B., Allen, D., Wittge, J., Danilewsky, A., Garagorri, J., Gorostegui-Colinas, E., …McNally, P. (2017). Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals, 7(11), Article 347. https://doi.org/10.3390/cryst7110347

Journal Article Type Article
Acceptance Date Nov 8, 2017
Online Publication Date Nov 14, 2017
Publication Date Nov 14, 2017
Deposit Date Dec 6, 2017
Publicly Available Date Mar 28, 2024
Journal Crystals
Publisher MDPI
Peer Reviewed Peer Reviewed
Volume 7
Issue 11
Article Number 347
DOI https://doi.org/10.3390/cryst7110347

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Published Journal Article (11.1 Mb)
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Publisher Licence URL
http://creativecommons.org/licenses/by/4.0/

Copyright Statement
© 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution
(CC BY) license (http://creativecommons.org/licenses/by/4.0/) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).





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