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Quantitative imaging of the stress/strain fields and generation of macroscopic cracks from indents in silicon.

Tanner, Brian and Allen, David and Wittge, Jochen and Danilewsky, Andreas and Garagorri, Jorge and Gorostegui-Colinas, Eider and Elizalde, M. and McNally, Patrick (2017) 'Quantitative imaging of the stress/strain fields and generation of macroscopic cracks from indents in silicon.', Crystals., 7 (11). p. 347.


The crack geometry and associated strain field around Berkovich and Vickers indents on silicon have been studied by X-ray diffraction imaging and micro-Raman spectroscopy scanning. The techniques are complementary; the Raman data come from within a few micrometres of the indentation, whereas the X-ray image probes the strain field at a distance of typically tens of micrometres. For example, Raman data provide an explanation for the central contrast feature in the X-ray images of an indent. Strain relaxation from breakout and high temperature annealing are examined and it is demonstrated that millimetre length cracks, similar to those produced by mechanical damage from misaligned handling tools, can be generated in a controlled fashion by indentation within 75 micrometres of the bevel edge of 200 mm diameter wafers.

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Publisher statement:© 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license ( which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
Date accepted:08 November 2017
Date deposited:06 December 2017
Date of first online publication:14 November 2017
Date first made open access:06 December 2017

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