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Low-voltage solution-processed hybrid light-emitting transistors.

Chaudhry, Mujeeb Ullah and Tetzner, Kornelius and Lin, Yen-Hung and Nam, Sungho and Pearson, Christopher and Groves, Chris and Petty, Michael C. and Anthopoulos, Thomas D. and Bradley, Donal D. C. (2018) 'Low-voltage solution-processed hybrid light-emitting transistors.', ACS applied materials & interfaces., 10 (22). pp. 18445-18449.


We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10–2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Item Type:Article
Full text:(AM) Accepted Manuscript
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Publisher statement:This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS applied materials & interfaces copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Date accepted:16 May 2018
Date deposited:23 May 2018
Date of first online publication:16 May 2018
Date first made open access:16 May 2019

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