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Incorporation of CdSe layers into CdTe thin film solar cells

Baines, Tom; Zoppi, Guillaume; Bowen, Leon; Shalvey, Thomas P.; Mariotti, Silvia; Durose, Ken; Major, Jonathan D.

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Authors

Tom Baines

Guillaume Zoppi

Leon Bowen leon.bowen@durham.ac.uk
Senior Manager (Electron Microscopy)

Thomas P. Shalvey

Silvia Mariotti

Ken Durose

Jonathan D. Major



Abstract

Incorporation of CdSe layers into CdTe thin film solar cells has recently emerged as a route to improve cell performance. It has been suggested that the formation of lower band gap CdTe(1-x)Se(x) phases following Se diffusion induces bandgap grading which may increase the carrier lifetime and thereby open circuit voltage. In this study we investigate the impact of CdSe incorporation on CdTe solar cell performance. We demonstrate that the standard CdS/CdTe device architecture is incompatible with Se incorporation, owing to large optical losses. An alternative cell structure with an oxide partner layer replacing the CdS with SnO2/CdSe/CdTe is developed, leading to cell efficiencies of > 13.5%. The differences in processing required for effective selenium incorporation are investigated with performance improvements resulting from additional post-growth annealing. Finally, other oxides such as TiO2, ZnO and FTO are demonstrated to be unsuitable partner layers but highlight that the choice of partner layer is key to further improving the performance.

Citation

Baines, T., Zoppi, G., Bowen, L., Shalvey, T. P., Mariotti, S., Durose, K., & Major, J. D. (2018). Incorporation of CdSe layers into CdTe thin film solar cells. Solar Energy Materials and Solar Cells, 180, 196-204. https://doi.org/10.1016/j.solmat.2018.03.010

Journal Article Type Article
Acceptance Date Mar 3, 2018
Online Publication Date Mar 22, 2018
Publication Date Jun 15, 2018
Deposit Date May 24, 2018
Publicly Available Date May 24, 2018
Journal Solar Energy Materials and Solar Cells
Print ISSN 0927-0248
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 180
Pages 196-204
DOI https://doi.org/10.1016/j.solmat.2018.03.010

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