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Control of domain wall pinning by localised focused Ga  + ion irradiation on Au capped NiFe nanowires.

Burn, D.M. and Atkinson, D. (2014) 'Control of domain wall pinning by localised focused Ga  + ion irradiation on Au capped NiFe nanowires.', Journal of applied physics., 116 (20). p. 163901.

Abstract

Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

Item Type:Article
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Status:Peer-reviewed
Publisher Web site:https://doi.org/10.1063/1.4900437
Publisher statement:© 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Burn, D.M. & Atkinson, D. (2014). Control of domain wall pinning by localised focused Ga  + ion irradiation on Au capped NiFe nanowires. Journal of Applied Physics 116(20): 163901 and may be found at https://doi.org/10.1063/1.4900437
Date accepted:14 October 2014
Date deposited:26 June 2018
Date of first online publication:22 October 2014
Date first made open access:No date available

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