Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire

Amit, Iddo; Englander, Danny; Horvitz, Dror; Sasson, Yaniv; Rosenwaks, Yossi

doi:10.1021/nl5024468

Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire

Amit, Iddo; Englander, Danny; Horvitz, Dror; Sasson, Yaniv; Rosenwaks, Yossi

Authors

Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor

Danny Englander

Dror Horvitz

Yaniv Sasson

Yossi Rosenwaks

Abstract

Wafer-scale fabrication of semiconductor nanowire devices is readily facilitated by lithography-based top-down fabrication of polysilicon nanowire (P-SiNW) arrays. However, free carrier trapping at the grain boundaries of polycrystalline materials drastically changes their properties. We present here transport measurements of P-SiNW array devices coupled with Kelvin probe force microscopy at different applied biases. By fitting the measured P-SiNW surface potential using electrostatic simulations, we extract the longitudinal dopant distribution along the nanowires as well as the density of grain boundaries interface states and their energy distribution within the band gap.

Citation

Amit, I., Englander, D., Horvitz, D., Sasson, Y., & Rosenwaks, Y. (2014). Density and Energy Distribution of Interface States in the Grain Boundaries of Polysilicon Nanowire. Nano Letters, 14(11), 6190-6194. https://doi.org/10.1021/nl5024468

Journal Article Type	Article
Acceptance Date	Jun 30, 2014
Online Publication Date	Oct 13, 2014
Publication Date	Nov 12, 2014
Deposit Date	Jul 5, 2018
Publicly Available Date	Jul 31, 2018
Journal	Nano Letters
Print ISSN	1530-6984
Electronic ISSN	1530-6992
Publisher	American Chemical Society
Peer Reviewed	Peer Reviewed
Volume	14
Issue	11
Pages	6190-6194
DOI	https://doi.org/10.1021/nl5024468

Files

Accepted Journal Article (1.7 Mb)
PDF

Copyright Statement
This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/nl5024468.