Potential barrier height at the grain boundaries of a poly-silicon nanowire

Shamir, Assaf; Amit, Iddo; Englander, Danny; Horvitz, Dror; Rosenwaks, Yossi

doi:10.1088/0957-4484/26/35/355201

Potential barrier height at the grain boundaries of a poly-silicon nanowire

Shamir, Assaf; Amit, Iddo; Englander, Danny; Horvitz, Dror; Rosenwaks, Yossi

Authors

Assaf Shamir

Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor

Danny Englander

Dror Horvitz

Yossi Rosenwaks

Abstract

We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.

Citation

Shamir, A., Amit, I., Englander, D., Horvitz, D., & Rosenwaks, Y. (2015). Potential barrier height at the grain boundaries of a poly-silicon nanowire. Nanotechnology, 26(35), Article 355201. https://doi.org/10.1088/0957-4484/26/35/355201

Journal Article Type	Article
Acceptance Date	Jul 13, 2015
Online Publication Date	Aug 6, 2015
Publication Date	Sep 4, 2015
Deposit Date	Jul 5, 2018
Publicly Available Date	Jul 31, 2018
Journal	Nanotechnology
Print ISSN	0957-4484
Electronic ISSN	1361-6528
Publisher	IOP Publishing
Peer Reviewed	Peer Reviewed
Volume	26
Issue	35
Article Number	355201
DOI	https://doi.org/10.1088/0957-4484/26/35/355201

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Copyright Statement
This is an author-created, un-copyedited version of an article accepted for publication/published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/0957-4484/26/35/355201