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Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation

Rashid, Marzaini; Idris, Muhammad Idzdihar; Horrocks, Benjamin Richard; Healy, Noel; Goss, Jonathan Paul; Horsfall, Alton Barrett

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Authors

Marzaini Rashid

Muhammad Idzdihar Idris

Benjamin Richard Horrocks

Noel Healy

Jonathan Paul Goss



Abstract

Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H‐SiC derived nanostructures.

Citation

Rashid, M., Idris, M. I., Horrocks, B. R., Healy, N., Goss, J. P., & Horsfall, A. B. (2018). Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology, 53(9), Article 1800120. https://doi.org/10.1002/crat.201800120

Journal Article Type Article
Online Publication Date Aug 21, 2018
Publication Date Sep 14, 2018
Deposit Date Oct 1, 2018
Publicly Available Date Mar 28, 2024
Journal Crystal Research and Technology
Print ISSN 0232-1300
Electronic ISSN 1521-4079
Publisher Wiley-VCH Verlag
Peer Reviewed Peer Reviewed
Volume 53
Issue 9
Article Number 1800120
DOI https://doi.org/10.1002/crat.201800120

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Copyright Statement
This is the peer reviewed version of the following article: Rashid, Marzaini, Idris, Muhammad Idzdihar, Horrocks, Benjamin Richard, Healy, Noel, Goss, Jonathan Paul & Horsfall, Alton Barrett (2018). Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology 53(9): 1800120, which has been published in final form at https://doi.org/10.1002/crat.201800120. This article may be used for non-commercial purposes in accordance With Wiley-VCH Terms and Conditions for self-archiving.





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