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Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures

Idris, M.I.; Weng, M.H.; Chan, H.K.; Murphy, A.E.; Clark, D.T.; Young, R.A.R.; Ramsay, E.P.; Wright, N.G.; Horsfall, A.B.

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Authors

M.I. Idris

M.H. Weng

H.K. Chan

A.E. Murphy

D.T. Clark

R.A.R. Young

E.P. Ramsay

N.G. Wright



Abstract

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm−3) or near interface traps at the interface of the gate oxide and the semiconductor (1012–1013 cm−2 eV−1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

Citation

Idris, M., Weng, M., Chan, H., Murphy, A., Clark, D., Young, R., …Horsfall, A. (2016). Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures. Journal of Applied Physics, 120(21), Article 214902. https://doi.org/10.1063/1.4969050

Journal Article Type Article
Acceptance Date Nov 15, 2016
Online Publication Date Dec 5, 2016
Publication Date Dec 7, 2016
Deposit Date Oct 1, 2018
Publicly Available Date Mar 29, 2024
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 120
Issue 21
Article Number 214902
DOI https://doi.org/10.1063/1.4969050
Related Public URLs https://eprints.ncl.ac.uk/230184

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Copyright Statement
© 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Idris, M.I., Weng, M.H., Chan, H.K., Murphy, A.E., Clark, D.T., Young, R.A.R., Ramsay, E.P., Wright, N.G. & Horsfall, A.B. (2016). Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures. Journal of Applied Physics 120(21): 214902 and may be found at https://doi.org/10.1063/1.4969050





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