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Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching

Rashid, M.; Horrocks, B.R.; Healy, N.; Goss, J.P.; Horsfall, A.B.

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Authors

M. Rashid

B.R. Horrocks

N. Healy

J.P. Goss



Abstract

Porous silicon carbide was fabricated from n-type 4H-SiC substrates via anodic electrochemical etching in HF/ethanol solution and suspended in ethanol after ultrasonication. We observed three photoluminescence bands: two at wavelengths of 303 nm and 345 nm were above the bulk bandgap and one at 455 nm was below the bulk bandgap. These blue-shifted and red-shifted emission processes reveal the interplay between quantum confinement, surface states, and band edge related optical transitions. We propose a model to explain the frequently observed deviation from the quantum confinement in the photoluminesence trends for SiC-derived nanoparticles suspended in solvents. The quantum confined properties of the SiC structures provide a route for optical tunability in the UV-blue spectrum for use in novel photonic and biomedical applications.

Citation

Rashid, M., Horrocks, B., Healy, N., Goss, J., & Horsfall, A. (2016). Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching. Journal of Applied Physics, 120(19), Article 194303. https://doi.org/10.1063/1.4968172

Journal Article Type Article
Acceptance Date Nov 7, 2016
Online Publication Date Nov 18, 2016
Publication Date Nov 21, 2016
Deposit Date Oct 1, 2018
Publicly Available Date Oct 2, 2018
Journal Journal of Applied Physics
Print ISSN 0021-8979
Electronic ISSN 1089-7550
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 120
Issue 19
Article Number 194303
DOI https://doi.org/10.1063/1.4968172

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Copyright Statement
© 2016 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Rashid, M., Horrocks, B.R., Healy, N., Goss, J.P. & Horsfall, A.B. (2016). Optical properties of mesoporous 4H-SiC prepared by anodic electrochemical etching. Journal of Applied Physics 120(19): 194303 and may be found at https://doi.org/10.1063/1.4968172





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