Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures

Paul, S; Pearson, C; Molloy, A; Cousins, MA; Green, M; Kolliopoulou, S; Dimitrakis, P; Normand, P; Tsoukalas, D; Petty, MC

doi:10.1021/nl034008t

Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures

Paul, S; Pearson, C; Molloy, A; Cousins, MA; Green, M; Kolliopoulou, S; Dimitrakis, P; Normand, P; Tsoukalas, D; Petty, MC

Authors

S Paul

C Pearson

A Molloy

MA Cousins

M Green

S Kolliopoulou

P Dimitrakis

P Normand

D Tsoukalas

MC Petty

Abstract

The Langmuir-Blodgett deposition of organically passivated gold nanoparticles is reported. A monolayer of these particles has been incorporated into a metal-insulator-semiconductor (MIS) structure. The MIS device exhibits a hysteresis in its capacitance versus voltage characteristic, the magnitude of which is dependent on the voltage sweep conditions. Charge storage in the layer of nanoparticles is thought to be responsible for this effect.

Citation

Paul, S., Pearson, C., Molloy, A., Cousins, M., Green, M., Kolliopoulou, S., …Petty, M. (2003). Langmuir-Blodgett film deposition of metallic nanoparticles and their application to electronic memory structures. Nano Letters, 3(4), 533-536. https://doi.org/10.1021/nl034008t

Journal Article Type	Article
Publication Date	Apr 9, 2003
Deposit Date	Aug 29, 2006
Journal	Nano Letters
Print ISSN	1530-6984
Electronic ISSN	1530-6992
Publisher	American Chemical Society
Peer Reviewed	Peer Reviewed
Volume	3
Issue	4
Pages	533-536
DOI	https://doi.org/10.1021/nl034008t
Keywords	Nanocrystals, Storage, Gold.