Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors

Chaudhry, Mujeeb Ullah; Wang, Nana; Tetzner, Kornelius; Seitkhan, Akmaral; Miao, Yanfeng; Sun, Yan; Petty, Michael C.; Anthopoulos, Thomas D.; Wang, Jianpu; Bradley, Donal D.C.

doi:10.1002/aelm.201800985

Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors

Chaudhry, Mujeeb Ullah; Wang, Nana; Tetzner, Kornelius; Seitkhan, Akmaral; Miao, Yanfeng; Sun, Yan; Petty, Michael C.; Anthopoulos, Thomas D.; Wang, Jianpu; Bradley, Donal D.C.

Authors

Dr Mujeeb Chaudhry mujeeb.u.chaudhry@durham.ac.uk
Associate Professor

Nana Wang

Kornelius Tetzner

Akmaral Seitkhan

Yanfeng Miao

Yan Sun

Michael C. Petty

Thomas D. Anthopoulos

Jianpu Wang

Donal D.C. Bradley

Abstract

Solution‐processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light‐emitting‐diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light‐emitting field‐effect transistors (LEFETs) has been surprisingly limited, wth only a few low‐performance devices reported. The development of hybrid LEFETs consisting of a solution‐processed self‐organized multiple‐quantum‐well lead iodide perovskite layer grown onto an electron‐transporting In2O3/ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm2 V−1 s−1) and a large current on/off ratio (>106), combined with near infrared light emission (λmax = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m−2). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart‐pixel‐format display applications.

Citation

Chaudhry, M. U., Wang, N., Tetzner, K., Seitkhan, A., Miao, Y., Sun, Y., …Bradley, D. D. (2019). Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors. Advanced Electronic Materials, 5(7), Article 1800985. https://doi.org/10.1002/aelm.201800985

Journal Article Type	Article
Acceptance Date	Apr 2, 2019
Online Publication Date	May 2, 2019
Publication Date	Jul 1, 2019
Deposit Date	May 3, 2019
Publicly Available Date	May 2, 2020
Journal	Advanced Electronic Materials
Electronic ISSN	2199-160X
Publisher	Wiley
Peer Reviewed	Peer Reviewed
Volume	5
Issue	7
Article Number	1800985
DOI	https://doi.org/10.1002/aelm.201800985

Files

Accepted Journal Article (1.9 Mb)
PDF

Copyright Statement
This is the accepted version of the following article: Chaudhry, Mujeeb Ullah, Wang, Nana, Tetzner, Kornelius, Seitkhan, Akmaral, Miao, Yanfeng, Sun, Yan, Petty, Michael C., Anthopoulos, Thomas D., Wang, Jianpu & Bradley, Donal D. C. (2019). Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors. Advanced Electronic Materials 5(7): 1800985, which has been published in final form at https://doi.org/10.1002/aelm.201800985. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.