Light‐emitting transistors based on solution‐processed heterostructures of self‐organized multiple‐quantum‐well perovskite and metal‐oxide semiconductors.

Abstract

Solution‐processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light‐emitting‐diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light‐emitting field‐effect transistors (LEFETs) has been surprisingly limited, wth only a few low‐performance devices reported. The development of hybrid LEFETs consisting of a solution‐processed self‐organized multiple‐quantum‐well lead iodide perovskite layer grown onto an electron‐transporting In2O3/ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm2 V−1 s−1) and a large current on/off ratio (>106), combined with near infrared light emission (λmax = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m−2). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart‐pixel‐format display applications.