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Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers.

Jin, Jidong and Wang, Lei and Zheng, Zhaoliang and Zhang, Jiawei and Hu, Xuzhi and Lu, Jian R. and Etor, David and Pearson, Chris and Song, Aimin and Wood, David and Gallant, Andrew J. and Balocco, Claudio (2019) 'Metal-insulator-metal diodes based on alkyltrichlorosilane self-assembled monolayers.', AIP advances., 9 (6). 065017.

Abstract

This paper reports on the experimental investigation of metal-insulator-metal (MIM) diodes based on alkyltrichlorosilane self-assembled monolayers (SAMs) with different alkyl chain lengths. The insulating SAM is sandwiched between two metal contacts, Pt and Ti, with different work functions. The electronic properties of the MIM diodes can be tuned by controlling the alkyl chain length of the SAMs to address different constraints in high speed electronics applications. Data fitting of the tunneling current through the MIM junctions using the Fowler-Nordheim model suggests that the device operation is influenced by the barrier heights of the diodes and thicknesses of the SAMs. The current-voltage characteristics achieved in MIM diodes based on alkyltrichlorosilane SAMs make them promising candidates for high speed electronics applications.

Item Type:Article
Full text:(VoR) Version of Record
Available under License - Creative Commons Attribution.
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Full text:Publisher-imposed embargo
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Status:Peer-reviewed
Publisher Web site:https://doi.org/10.1063/1.5100252
Publisher statement:© 2019 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). https://doi.org/10.1063/1.5100252
Date accepted:13 June 2019
Date deposited:25 June 2019
Date of first online publication:21 June 2019
Date first made open access:No date available

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