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Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films

Huang, Tongtong; Wang, Yujia; Li, Haobo; Wang, Meng; Lyu, Yingjie; Shen, Shengchun; Lu, Nianpeng; He, Qing; Yu, Pu

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Authors

Tongtong Huang

Yujia Wang

Haobo Li

Meng Wang

Yingjie Lyu

Shengchun Shen

Nianpeng Lu

Pu Yu



Abstract

Strain engineering of transition metal oxides due to their desirable properties has long been a focal point in both physics and material sciences. Here, we investigate the strain dependence of electronic and optical properties of the high valence iron-based perovskite CaFeO3d. Using substrates with various lattice constants, we achieve a wide range of tunable epitaxial strain states in CaFeO3d thin films ranging from compressive 0.37% to tensile 3.58%. Electrical transport and optical absorption measurements demonstrate a distinct strain-dependent behavior, in which larger tensile strain leads to higher electrical resistivity and a larger optical bandgap. We attribute these modulations to tensile strain suppressed p-d hybridization in CaFeO3d, as evidenced by soft X-ray absorption spectra measurements.

Citation

Huang, T., Wang, Y., Li, H., Wang, M., Lyu, Y., Shen, S., …Yu, P. (2019). Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films. Applied Physics Letters, 114(22), Article 221907. https://doi.org/10.1063/1.5098025

Journal Article Type Article
Acceptance Date May 15, 2019
Online Publication Date Jun 7, 2019
Publication Date Jun 7, 2019
Deposit Date Jun 26, 2019
Publicly Available Date Jun 7, 2020
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 114
Issue 22
Article Number 221907
DOI https://doi.org/10.1063/1.5098025

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